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| CNY75(G) Series Vishay Semiconductors Optocoupler with Phototransistor Output Description The CNY75(G) series consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): 14827 D For appl. class I - IV at mains voltage 300 V D For appl. class I - III at mains voltage 600 V according to VDE 0884, table 2, suitable for: Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface. B 6 C 5 E 4 VDE Standards These couplers perform safety functions according to the following equipment standards: 1 2 A (+) C (-) 3 n.c. 95 10805 D VDE 0884 Optocoupler for electrical safety requirements D IEC 950/EN 60950 D VDE 0804 D IEC 65 Safety for mains-operated electronic and related household apparatus Office machines (applied for reinforced isolation for mains voltage 400 VRMS) apparatus and data Telecommunication processing Order Instruction Ordering Code CTR Ranking CNY75A/ CNY75GA1) 63 to 125% CNY75B/ CNY75GB1) 100 to 200% CNY75C/ CNY75GC1) 160 to 320% 1) G = Leadform 10.16 mm; G is not marked on the body Remarks Rev. A4, 11-Jan-99 1 (12) CNY75(G) Series Vishay Semiconductors Features Approvals: D Rated recurring peak voltage (repetitive) D Creepage current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS D BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402 D FIMKO (SETI): EN 60950, Certificate number 12399 D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 D VDE 0884, Certificate number 94778 VDE 0884 related features: D Isolation materials according to UL94-VO D Pollution degree 2 (DIN/VDE 0110 part 1 resp. IEC 664) D Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV D Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak) D Climatic classification 55/100/21 (IEC 68 part 1) D Special construction: Therefore, extra low coupling capacity of typical 0.3 pF, high Common Mode Rejection D Low temperature coefficient of CTR D CTR offered in 3 groups D Coupling System A Absolute Maximum Ratings Input (Emitter) Parameter Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM PV Tj Symbol VCBO VCEO VECO IC ICM PV Tj Symbol VIO Ptot Tamb Tstg Tsd Value 5 60 3 100 125 Value 90 90 7 50 100 150 125 Value 3.75 250 -55 to +100 -55 to +125 260 Unit V mA A mW C Unit V V V mA mA mW C Unit kV mW C C C tp 10 ms Tamb 25C Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector current Collector peak current Power dissipation Junction temperature Test Conditions tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameter AC isolation test voltage (RMS) Total power dissipation Ambient temperature range Storage temperature range Soldering temperature Test Conditions t = 1 min Tamb 25C 2 mm from case, t 10 s 2 (12) Rev. A4, 11-Jan-99 CNY75(G) Series Vishay Semiconductors Electrical Characteristics (Tamb = 25C) Input (Emitter) Parameter Forward voltage Reverse current Junction capacitance Test Conditions IF = 50 mA VR = 6 V VR = 0, f = 1 MHz Symbol VF IR Cj Min. Typ. 1.25 50 Max. 1.6 10 Unit V mA pF Output (Detector) Parameter Collector base voltage Collector emitter voltage Emitter collector voltage Collector emitter cut-off current Test Conditions IC = 100 mA IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0 Symbol VCBO VCEO VECO ICEO Min. 90 90 7 Typ. Max. Unit V V V nA 150 Coupler Parameter Collector emitter saturation voltage Cut-off frequency Coupling capacitance Test Conditions IF = 10 mA, IC = 1 mA VCE = 5 V, IF = 10 mA, RL = 100 f = 1 MHz Symbol VCEsat fc Ck Min. Typ. Max. 0.3 Unit V kHz pF W 110 0.3 Current Transfer Ratio (CTR) Parameter IC/IF Test Conditions VCE = 5 V, IF = 1 mA Type CNY75(G)A CNY75(G)B CNY75(G)C CNY75(G)A CNY75(G)B CNY75(G)C Symbol CTR CTR CTR CTR CTR CTR Min. 0.15 0.3 0.6 0.63 1 1.6 Typ. Max. Unit VCE = 5 V, IF = 10 mA 1.25 2 3.2 Rev. A4, 11-Jan-99 3 (12) CNY75(G) Series Vishay Semiconductors Maximum Safety Ratings (according to VDE 0884) see figure 1 This device is used for protective separation against electrical shock only within the maximum safety ratings. This must be ensured by using protective circuits in the applications. Input (Emitter) Parameters Forward current Test Conditions Symbol Isi Value 130 Unit mA Output (Detector) Parameters Power dissipation Test Conditions Tamb 25C Symbol Psi Value 265 Unit mW Coupler Parameters Rated impulse voltage Safety temperature Test Conditions Symbol VIOTM Tsi Value 6 150 Unit kV C Insulation Rated Parameters (according to VDE 0884) Parameter Test Conditions Partial discharge test voltage - 100%, ttest = 1 s Routine test Partial discharge test voltage - tTr = 60 s, ttest = 10 s, g g Lot test (sample test) (see figure 2) Insulation resistance VIO = 500 V VIO = 500 V, Tamb 100C VIO = 500 V, Tamb 150C (construction test only) 275 Ptot - Total Power Dissipation ( mW ) 250 225 200 175 150 125 100 75 50 25 0 0 95 10923 Symbol Vpd VIOTM Vpd RIO RIO RIO Min. 1.6 6 1.3 1012 1011 109 Typ. Max. Unit kV kV kV W W W VIOTM V t1, t2 = 1 to 10 s t3, t4 = 1 s ttest = 10 s tstres = 12 s VPd VIOWM VIORM Psi (mW) Isi (mA) 0 t3 ttest t4 t1 tTr = 60 s t2 tstres t 25 50 75 100 125 150 175 13930 Tamb - Ambient Temperature ( C ) Figure 1. Derating diagram Figure 2. Test pulse diagram for sample test according to DIN VDE 0884 4 (12) Rev. A4, 11-Jan-99 CNY75(G) Series Vishay Semiconductors Switching Characteristics of CNY75(G(A Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 ( (see figure 3) g ) W VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.0 2.5 2.7 0.3 4.5 3.0 10.0 25.0 Unit ms ms ms ms ms ms ms ms Switching Characteristics of CNY75(G)B Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 ( (see figure 3) g ) W VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.5 3.0 3.7 0.3 5.5 4.0 16.5 20 Unit ms ms ms ms ms ms ms ms Switching Characteristics of CNY75(G)C Parameter Delay time Rise time Fall time Storage time Turn-on time Turn-off time Turn-on time Turn-off time Test Conditions VS = 5 V, IC = 10 mA, RL = 100 ( (see figure 3) g ) W VS = 5 V, IF = 10 mA, RL = 1 kW ( (see figure 4) g ) Symbol td tr tf ts ton toff ton toff Typ. 2.8 4.2 4.7 0.3 7.0 5.0 11 37.5 Unit ms ms ms ms ms ms ms ms Rev. A4, 11-Jan-99 5 (12) CNY75(G) Series Vishay Semiconductors IF IF +5V IC = 10 mA ; Adjusted through input amplitude 0 RG = 50 tp = 0.01 T tp = 50 W 96 11698 ms 50 IF Channel I Oscilloscope RL CL W 100 W Channel II w 1 MW v 20 pF 0 tp IC 100% 90% t 95 10891 Figure 3. Test circuit, non-saturated operation I 0 F I +5V F I C 10% 0 tr td ton Channel I Channel II tp td tr ton (= td + tr) pulse duration delay time rise time turn-on time ts toff ts tf toff (= ts + tf) storage time fall time turn-off time tf t R = 50W G t p = 0.01 T t = 50 p ms 50W 14944 1k W Oscilloscope R 1M L C 20 pF L w v W Figure 4. Test circuit, saturated operation Figure 5. Switching times Typical Characteristics (Tamb = 25_C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 I F - Forward Current ( mA ) 80 120 96 11862 1000.0 100.0 200 Phototransistor 150 IR-diode 100 50 0 0 40 10.0 1.0 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) Tamb - Ambient Temperature ( C ) 96 11700 Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 7. Forward Current vs. Forward Voltage 6 (12) Rev. A4, 11-Jan-99 CNY75(G) Series Vishay Semiconductors 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 Tamb - Ambient Temperature ( C ) 0.01 0.1 95 11040 CTR rel - Relative Current Transfer Ratio 100 IC - Collector Current ( mA ) VCE=5V IF=10mA VCE=5V 10 1 0.1 1 10 100 96 11918 IF - Forward Current ( mA ) Figure 8. Relative Current Transfer Ratio vs. Ambient Temperature 10000 ICEO- Collector Dark Current, with open Base ( nA ) Figure 11. Collector Current vs. Forward Current 100 IC - Collector Current ( mA ) VCE=30V IF=0 IF=50mA 20mA 10 10mA 5mA 1 2mA 1mA CNY75A 1000 100 10 1 0 95 11038 0.1 25 50 75 100 95 11041 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 9. Collector Dark Current vs. Ambient Temperature 1 I CB - Collector Base Current ( mA ) VCB=5V 0.1 Figure 12. Collector Current vs. Collector Emitter Voltage 100 IF=50mA IC - Collector Current ( mA ) 20mA 10 10mA 5mA 2mA 1mA 0.1 1 10 IF - Forward Current ( mA ) 100 95 11042 0.01 1 0.001 95 11039 CNY75B 0.1 1 10 100 VCE - Collector Emitter Voltage ( V ) Figure 10. Collector Base Current vs. Forward Current Figure 13. Collector Current vs. Collector Emitter Voltage Rev. A4, 11-Jan-99 7 (12) CNY75(G) Series Vishay Semiconductors V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% 0.8 CNY75C 0.6 100.0 IF=50mA IC - Collector Current ( mA ) 20mA 10mA 10.0 5mA 2mA 1.0 1mA CNY75C 0.1 0.1 96 11919 0.4 0.2 20% 10% 0 1 10 IC - Collector Current ( mA ) 100 1.0 10.0 100.0 VCE - Collector Emitter Voltage ( V ) 95 11044 Figure 14. Collector Current vs. Collector Emitter Voltage V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 CTR=50% Figure 17. Coll. Emitter Sat. Voltage vs. Coll. Current 1000 VCE=5V hFE - DC Current Gain 800 0.8 CNY75A 0.6 600 0.4 20% 0.2 10% 0 1 10 IC - Collector Current ( mA ) 100 400 200 0 0.01 0.1 1 10 100 95 11034 95 11035 IC - Collector Current ( mA ) Figure 15. Coll. Emitter Sat. Voltage vs. Coll. Current V CEsat - Collector Emitter Saturation Voltage ( V ) 1.0 Figure 18. DC Current Gain vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) CTR=50% 0.8 CNY75B 0.6 20% CNY75A(G) VCE=5V 100 0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100 10 10% 1 0.1 95 11036 1 10 100 95 11043 IF - Forward Current ( mA ) Figure 16. Coll. Emitter Sat. Voltage vs. Coll. Current Figure 19. Current Transfer Ratio vs. Forward Current 8 (12) Rev. A4, 11-Jan-99 CNY75(G) Series Vishay Semiconductors 1000 CTR - Current Transfer Ratio ( % ) CNY75B(G) VCE=5V 100 50 CNY75B(G) Saturated Operation VS=5V RL=1kW toff 20 10 ton 0 0.1 95 11045 t on / t off - Turn on / Turn off Time ( s ) m 40 30 100 95 11048 10 1 1 10 IF - Forward Current ( mA ) 0 5 10 15 20 IF - Forward Current ( mA ) Figure 20. Current Transfer Ratio vs. Forward Current 1000 CTR - Current Transfer Ratio ( % ) CNY75C(G) VCE=5V 100 Figure 23. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( s ) 50 CNY75C(G) Saturated Operation VS=5V RL=1kW toff m 40 30 20 10 10 ton 0 0 5 10 15 20 1 0.1 95 11046 1 10 100 95 11050 IF - Forward Current ( mA ) IF - Forward Current ( mA ) Figure 21. Current Transfer Ratio vs. Forward Current t on / t off - Turn on / Turn off Time ( m s ) 50 CNY75A(G) Saturated Operation VS=5V RL=1kW toff 20 10 0 0 95 11033 Figure 24. Turn on / off Time vs. Forward Current t on / t off - Turn on / Turn off Time ( s ) 20 CNY75A(G) Non Saturated Operation VS=5V RL=100W 40 m 15 ton 10 toff 5 30 ton 20 95 11032 0 5 10 15 0 2 4 6 8 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 22. Turn on / off Time vs. Forward Current Figure 25. Turn on / off Time vs. Collector Current Rev. A4, 11-Jan-99 9 (12) CNY75(G) Series Vishay Semiconductors 20 CNY75B(G) Non Saturated Operation VS=5V RL=100W 20 CNY75C(G) Non Saturated Operation VS=5V RL=100W t on / t off - Turn on / Turn off Time ( m s ) 15 t on / t off - Turn on / Turn off Time ( s ) m 15 ton 10 toff 5 0 10 95 11049 10 ton 5 toff 0 0 2 4 6 8 0 2 4 6 8 10 95 11047 IC - Collector Current ( mA ) IC - Collector Current ( mA ) Figure 26. Turn on / off Time vs. Collector Current Figure 27. Turn on / off Time vs. Collector Current Type Date Code (YM) XXXXXX 918 A TK 63 0884 V DE 15090 Production Location Safety Logo Coupling System Indicator Company Logo Figure 28. Marking example 10 (12) Rev. A4, 11-Jan-99 CNY75(G) Series Vishay Semiconductors Dimensions of CNY75G in mm weight: creepage distance: air path: ca. 0.50 g 8 mm 8 mm y y after mounting on PC board 14771 Dimensions of CNY75 in mm weight: creepage distance: air path: 0.50 g 6 mm 6 mm y y after mounting on PC board 14770 Rev. A4, 11-Jan-99 11 (12) CNY75(G) Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 12 (12) Rev. A4, 11-Jan-99 |
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